High-quality InGaN/GaN heterojunctions and their photovoltaic effects
نویسندگان
چکیده
Related Articles Temperature dependent surface photovoltage spectra of type I GaAs1−xSbx/GaAs multiple quantum well structures J. Appl. Phys. 113, 073702 (2013) Photoferroelectric solar to electrical conversion Appl. Phys. Lett. 102, 043902 (2013) Electrical transport and photocurrent mechanisms in silicon nanocrystal multilayers J. Appl. Phys. 113, 043703 (2013) Photothermoelectric effect as a means for thermal characterization of nanocomposites based on intrinsically conducting polymers and carbon nanotubes J. Appl. Phys. 113, 044502 (2013) Internal detection of surface plasmon coupled chemiluminescence during chlorination of potassium thin films J. Chem. Phys. 138, 034710 (2013)
منابع مشابه
Photoluminescence microscopy of InGaN quantum wells
Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaN/InGaN heterojunctions. Room temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted molecular beam epitaxy was measured as a function of position on a facet perpendicular to the layer structure. Our high r...
متن کاملSmall valence-band offsets at GaN/InGaN heterojunctions
The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the in...
متن کاملFabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes.
In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (V(oc)) from 1.88 to 1.94 V and short-circuit current density (J(sc)) from 0.84 to 1.02 mA/cm(2) are observed. Most significantly...
متن کاملInGaN/GaN multiple quantum well solar cells with long operating wavelengths
We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells MQWs with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments 420 nm . The fabricated solar cells based on In0.3Ga0.7N /GaN MQWs exhibit...
متن کاملSemipolar InGaN/GaN Converters for Bright Green Emission and Stripe LEDs 59 Semipolar InGaN/GaN Converters for Bright Green Emission and Stripe Light Emitting Diodes
Optically pumped green converter structures based on three-dimensional (3D) inverse pyramids were studied. The green emission intensity is determined by the conversion rate ηc and the absorption fraction ηa, indicating the InGaN/GaN quantum well (QW) crystal quality and its absorption capability, respectively. 15 was found to be the optimal QW number based the epitaxial condition for that serie...
متن کامل